Publications (40)
Optimization of Controlled-Z Gate with Data-Driven Gradient Ascent Pulse Engineering in a Superconducting Qubit System
Zhiwen Zong, Zhenhai Sun, Zhangjingzi Dong +13
The experimental optimization of a two-qubit controlled-Z (CZ) gate is realized following two different data-driven gradient ascent pulse engineering (GRAPE) protocols in the aim o…
Single-shot realization of nonadiabatic holonomic gates with a superconducting Xmon qutrit
Zhenxing Zhang, P. Z. Zhao, Tenghui Wang +6
Nonadiabatic holonomic quantum computation has received increasing attention due to its robustness against control errors as well as high-speed realization. The original protocol o…
Q-Tag: Watermarking Quantum Circuit Generative Models
Yang Yang, Yuzhu Long, Han Fang +4
Quantum cloud platforms have become the most widely adopted and mainstream approach for accessing quantum computing resources, due to the scarcity and operational complexity of qua…
Design of Cryogenic Fully Differential Gain Boosting-OTA by the methodology used for a 14 bit Pipelined-SAR ADC
Mingjie Wen, Chao Luo, BoLun Zeng +1
Quantum computing (QC) requires cryogenic electronic circuits as control and readout sub-systems of quantum chips to meet the qubit scale-up challenges.At this temperature,MOSFETs…
Quantify the Non-Markovian Process with Intervening Projections in a Superconducting Processor
Liang Xiang, Zhiwen Zong, Ze Zhan +9
A Markov assumption considers a physical system memoryless to simplify its dynamics. Whereas memory effect or the non-Markovian phenomenon is more general in nature. In the quantum…
High-Sensitivity Temperature Sensing Using an Implanted Single Nitrogen-Vacancy Center Array in Diamond
Junfeng Wang, Fupan Feng, Jian Zhang +11
We presented a high-sensitivity temperature detection using an implanted single Nitrogen-Vacancy center array in diamond. The high-order Thermal Carr-Purcell-Meiboom-Gill (TCPMG) m…
QPanda: high-performance quantum computing framework for multiple application scenarios
Menghan Dou, Tianrui Zou, Yuan Fang +8
With the birth of Noisy Intermediate Scale Quantum (NISQ) devices and the verification of "quantum supremacy" in random number sampling and boson sampling, more and more fields hop…
Cryogenic low power CMOS analog buffer at 4.2K
Yajie Huang, Chao Luo, Tengteng Lu +3
A novel power-efficient analog buffer at liquid helium temperature is proposed. The proposed circuit is based on an input stage consisting of two complementary differential pairs t…
QPanda3: A High-Performance Software-Hardware Collaborative Framework for Large-Scale Quantum-Classical Computing Integration
Tianrui Zou, Yuan Fang, Jing Wang +8
In emerging quantum-classical integration applications, the classical time cost-especially from compilation and protocol-level communication often exceeds the execution time of qua…
Cryogenic Modeling of MOSFET Device Based on BSIM and EKV Models
Tengteng Lu, Yuanke Zhang, Yujing Zhang +3
Kink effect is a large obstacle for the cryogenic model of inversion-type bulk silicon MOSFET devices. This letter used two methods to correct the kink effect: the modified evoluti…
Perfectly Conducting Graphene Electronic Waveguide with Curved Channels
Vahid Mosallanejad, Ke Wang, Zhenhua Qiao +1
We theoretically investigate the electronic transport properties of curved graphene waveguides by employing non-equilibrium Green's function techniques. We systematically study the…
Experimental demonstration of work fluctuations along a shortcut to adiabaticity with a superconducting Xmon qubit
Zhenxing Zhang, Tenghui Wang, Liang Xiang +9
In a `shortcut-to-adiabaticity' (STA) protocol, the counter-diabatic Hamiltonian, which suppresses the non-adiabatic transition of a reference `adiabatic' trajectory, induces a qua…
Enhanced quantum coherence in graphene caused by Pd cluster deposition
Yuyuan Qin, Junhao Han, Guoping Guo +8
We report on the unexpected increase in the dephasing lengths of a graphene sheet caused by the deposition of Pd nanoclusters, as demonstrated by weak localization measurements. Th…
The experimental realization of high-fidelity `shortcut-to-adiabaticity' quantum gates in a superconducting Xmon qubit
Tenghui Wang, Zhenxing Zhang, Liang Xiang +10
Based on a `shortcut-to-adiabaticity' (STA) scheme, we theoretically design and experimentally realize a set of high-fidelity single-qubit quantum gates in a superconducting Xmon q…
Characterization and Modeling of Silicon-on-Insulator Lateral Bipolar Junction Transistors at Liquid Helium Temperature
Yuanke Zhang, Yuefeng Chen, Yifang Zhang +3
Conventional silicon bipolars are not suitable for low-temperature operation due to the deterioration of current gain (). In this paper, we characterize lateral bipolar junctio…
Experimental realization of a fast controlled-Z gate via a shortcut-to-adiabaticity
Tenghui Wang, Zhenxing Zhang, Liang Xiang +8
For a frequency-tunable two-qubit system, a controlled-Z (CZ) gate can be realized by adiabatically driving the qubit system through an avoided level crossing between an auxiliary…
Topological Hall effect in bulk ferromagnet CrTe embedded with black-phosphorus-like bismuth nanosheets
Liang Zhou, Junshu Chen, Xiaobin Chen +14
We implement the molecular beam epitaxy method to embed the black-phosphorus-like bismuth nanosheets into the bulk ferromagnet CrTe. As a typical surfactant, bismuth lowers…
Coherence times of precisely depth controlled NV centers in diamond
Junfeng Wang, Wenlong Zhang, Jian Zhang +8
We investigated the depth dependence of coherence times of nitrogen-vacancy (NV) centers through precisely depth controlling by a moderately oxidative at 580°C in air. By successi…
Doubly and triply coupled nanowire antennas
Liu Lu, Lulu Wang, Chang-Ling Zou +5
Nanoantenna is one of the most important optical components for light harvesting. In this study, we show experimental evidence of interactions between coupled nanowires by comparin…
Interference of surface plasmon polaritons from a "point" source
Xifeng Ren, Aiping Liu, Changling Zou +5
The interference patterns of the surface plasmon polaritons(SPPs) on the metal surface from a "point" source are observed. These interference patterns come from the forward SPPs an…
Experimental Determination of Multi-Qubit Ground State via a Cluster Mean-Field Algorithm
Ze Zhan, Chongxin Run, Zhiwen Zong +8
A quantum eigensolver is designed under a multi-layer cluster mean-field (CMF) algorithm by partitioning a quantum system into spatially-separated clusters. For each cluster, a red…
Undoped Strained Ge Quantum Well with Ultrahigh Mobility Grown by Reduce Pressure Chemical Vapor Deposition
Zhenzhen Kong, Zonghu Li, Gang Cao +15
We fabricate an undoped Ge quantum well under 30 nm Ge0.8Si0.2 shallow barrier with reverse grading technology. The under barrier is deposited by Ge0.8Si0.2 followed by Ge0.9Si0.1…
Hot Carrier Degradation in MOSFETs at Cryogenic Temperatures Down to 4.2 K
Yuanke Zhang, Chao Luo, Tengteng Lu +3
Wide attention has been focused on cryogenic CMOS (Cryo-CMOS) operation because of its wide application and the improvement of CMOS performance. However, hot carrier degradation (H…
Quantum-Enhanced LLM Efficient Fine Tuning
Xiaofei Kong, Lei Li, Zhaoyun Chen +10
Low-Rank Adaptation (LoRA) enables efficient fine-tuning of pre-trained language models through low-rank matrix approximation, achieving effectiveness in many scenarios. However, i…
Quantum-Inspired Fine-Tuning for Few-Shot AIGC Detection via Phase-Structured Reparameterization
Kaiyang Xing, Han Fang, Zhaoyun Chen +4
Recent studies show that quantum neural networks (QNNs) generalize well in few-shot regimes. To extend this advantage to large-scale tasks, we propose Q-LoRA, a quantum-enhanced fi…
Characterization and Modeling of Native MOSFETs Down to 4.2 K
Yuanke Zhang, Tengteng Lu, Wenjie Wang +4
The extremely low threshold voltage (Vth) of native MOSFETs (Vth~0V@300K) is conducive to the design of cryogenic circuits. Previous research on cryogenic MOSFETs mainly focused on…
Characterization and Modeling of 0.18μm CMOS Technology at sub-Kelvin Temperature
Tengteng Lu, Zhen Li, Chao Luo +3
Previous cryogenic electronics studies are most above 4.2K. In this paper we present the cryogenic characterization of a 0.18μm standard bulk CMOS technology(1.8V and 5V) at sub-k…
Generic detection-based error-mitigation using quantum autoencoders
Xiao-Ming Zhang, Weicheng Kong, Muhammad Usman Farooq +3
Efficient error-mitigation techniques demanding minimal resources is key to quantum information processing. We propose a generic protocol to mitigate quantum errors using detection…
VQNet 2.0: A New Generation Machine Learning Framework that Unifies Classical and Quantum
Huanyu Bian, Zhilong Jia, Menghan Dou +13
With the rapid development of classical and quantum machine learning, a large number of machine learning frameworks have been proposed. However, existing machine learning framework…
An automated approach for consecutive tuning of quantum dot arrays
Hanwei Liu, Baochuan Wang, Ning Wang +5
Recent progress has shown that the dramatically increased number of parameters has become a major issue in tuning of multi-quantum dot devices. The complicated interactions between…
Experimental Determination of Electronic States via Digitized Shortcut-to-Adiabaticity and Sequential Digitized Adiabaticity
Ze Zhan, Chongxin Run, Zhiwen Zong +9
A combination of the digitized shortcut-to-adiabaticity (STA) and the sequential digitized adiabaticity is implemented in a superconducting quantum device to determine electronic s…
Characterization of 0.18μm CMOS Ring Oscillator at Liquid Helium Temperature
Chao Luo, Tengteng Lu, Zhen Li +2
This paper presents low power dissipation, low phase noise ring oscillators (ROs) based on Semiconductor Manufacturing International Corporation (SMIC) 0.18μm CMOS technology at l…
Cryogenic Characerization and Modeling of Standard CMOS down to Liquid Helium Temperature for Quantum Computing
Zhen Li, Chao Luo, Tengteng Lu +3
Cryogenic characterization and modeling of 0.18um CMOS technology (1.8V and 5V) are presented in this paper. Several PMOS and NMOS transistors with different width to length ratios…
Quantum plasmonic N00N state in a silver nanowire and its use for quantum sensing
Yang Chen, Changhyoup Lee, Liu Lu +9
The control of quantum states of light at the nanoscale has become possible in recent years with the use of plasmonics. Here, many types of nanophotonic devices and applications ha…
Experimental realization of nonadiabatic geometric gates with a superconducting Xmon qubit
P. Z. Zhao, Zhangjingzi Dong, Zhenxing Zhang +3
Geometric phases are only dependent on evolution paths but independent of evolution details so that they own some intrinsic noise-resilience features. Based on different geometric…
A quantum circuit simulator and its applications on Sunway TaihuLight supercomputer
Zhimin Wang, Zhaoyun Chen, Shengbin Wang +4
Classical simulation of quantum computation is vital for verifying quantum devices and assessing quantum algorithms. We present a new quantum circuit simulator developed on the Sun…
Coupling graphene nanomechanical motion to a single-electron transistor
Gang Luo, Zhuo-Zhi Zhang, Guang-Wei Deng +5
Graphene-based electromechanical resonators have attracted much interest recently because of the outstanding mechanical and electrical properties of graphene and their various appl…
A simultaneous feedback and feed-forward control and its application to realize a random walk on the Bloch sphere in a superconducting Xmon-qubit system
Liang Xiang, Zhiwen Zong, Zhenhai Sun +9
Measurement-based feedback control is central in quantum computing and precise quantum control. Here we realize a fast and flexible field-programmable-gate-array-based feedback con…
Origin Pilot: a Quantum Operating System for Effecient Usage of Quantum Resources
Weicheng Kong, Junchao Wang, Yongjian Han +5
The operating system is designed to manage the hardware and software resources of a computer. With the development of quantum computing, the management of quantum resources and coo…
Characterization of GaN-based HEMTs Down to 4.2 K for Cryogenic Applications
Bolun Zeng, Haochen Zhang, Zikun Xiang +9
The cryogenic performance of GaN-based HEMTs (high-electron-mobility transistors) is systematically investigated by the direct current (DC) and low-frequency noise (LFN) characteri…