Publications (39)
Light effective hole mass in undoped Ge/SiGe quantum wells
M. Lodari, A. Tosato, D. Sabbagh +5
We report density-dependent effective hole mass measurements in undoped germanium quantum wells. We are able to span a large range of densities ( cm) in…
On-chip Integration of Si/SiGe-based Quantum Dots and Switched-capacitor Circuits
Y. Xu, F. K. Unseld, A. Corna +9
Solid-state qubits integrated on semiconductor substrates currently require at least one wire from every qubit to the control electronics, leading to a so-called wiring bottleneck…
Lightly-strained germanium quantum wells with hole mobility exceeding one million
M. Lodari, O. Kong, M. Rendell +5
We demonstrate that a lightly-strained germanium channel ( = -0.41%) in an undoped Ge/SiGe heterostructure field effect transistor supports a 2D h…
Single-Hole Pump in Germanium
A. Rossi, N. W. Hendrickx, A. Sammak +3
Single-charge pumps are the main candidates for quantum-based standards of the unit ampere because they can generate accurate and quantized electric currents. In order to approach…
Strong spin-photon coupling in silicon
N. Samkharadze, G. Zheng, N. Kalhor +6
We report the strong coupling of a single electron spin and a single microwave photon. The electron spin is trapped in a silicon double quantum dot and the microwave photon is stor…
Low field magnetotransport in strained Si/SiGe cavities
G. Scappucci, L. Di Gaspare, F. Evangelisti +6
Low field magnetotransport revealing signatures of ballistic transport effects in strained Si/SiGe cavities is investigated. We fabricated strained Si/SiGe cavities by confining a…