papers
Publications (3)
cond-mat.mes-hall2009
Fine and Large Coulomb Diamonds in a Silicon Quantum Dot
T. Kodera, T. Ferrus, T. Nakaoka +4
We experimentally study the transport properties of silicon quantum dots (QDs) fabricated from a highly doped n-type silicon-on-insulator wafer. Low noise electrical measurements u…
cond-mat.mes-hall2011
Detection of charge motion in a non-metallic silicon isolated double quantum dot
T. Ferrus, A. Rossi, M. Tanner +3
As semiconductor device dimensions are reduced to the nanometer scale, effects of high defect density surfaces on the transport properties become important to the extent that the m…
cond-mat.mes-hall2014
Ambipolar quantum dots in intrinsic silicon
A. C. Betz, M. F. Gonzalez-Zalba, G. Podd +1
We electrically measure intrinsic silicon quantum dots with electrostatically defined tunnel barriers. The presence of both p-type and n-type ohmic contacts enables the accumulatio…