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Publications (2)

cond-mat.mtrl-sci2016

All-nitride and In-free Al $_{x}$ Ga $_{1 - x}$ N:Mn/GaN distributed Bragg reflectors for the near-infrared

G. Capuzzo, D. Kysylychyn, R. Adhikari +4

Since the technological breakthrough prompted by the inception of light emitting diodes based on III-nitrides, these material systems have emerged as strategic semiconductors not o…

cond-mat.mes-hall2015

Controlling a three dimensional electron slab of graded Al $_{x}$ Ga $_{1 - x}$ N

R. Adhikari, Tian Li, G. Capuzzo +1

Polarization induced degenerate $n$ -type doping with electron concentrations up to $\sim$ 10 $^{20}$ \,cm $^{- 3}$ is achieved in graded Al $_{x}$ Ga $_{1 - x}$ N layers ( $x$ : 0\%$\rightarrow…

Publications (2)

All-nitride and In-free Alx​Ga1−x​N:Mn/GaN distributed Bragg reflectors for the near-infrared

Controlling a three dimensional electron slab of graded Alx​Ga1−x​N

All-nitride and In-free Al $_{x}$ Ga $_{1 - x}$ N:Mn/GaN distributed Bragg reflectors for the near-infrared

Controlling a three dimensional electron slab of graded Al $_{x}$ Ga $_{1 - x}$ N