Publications (13)
Strain, doping and electronic transport of large area monolayer MoS2 exfoliated on gold and transferred to an insulating substrate
S. E. Panasci, E. Schilirò, G. Greco +5
Gold-assisted mechanical exfoliation currently represents a promising method to separate ultra-large (cm-scale) transition metal dichalcogenides (TMDs) monolayers (1L) with excelle…
Direct atomic layer deposition of ultra-thin and films on gold-supported monolayer
E. Schilirò, S. E. Panasci, A. M. Mio +9
In this paper, the atomic layer deposition (ALD) of ultra-thin films (<4 nm) of and on Au-supported monolayer (1L) is investigated, providing an i…
Substrate impact on the thickness dependence of vibrational and optical properties of large area produced by gold-assisted exfoliation
S. E. Panasci, E. Schilirò, F. Migliore +5
The gold-assisted exfoliation is a very effective method to produce large-area (-scale) membranes of molybdenum disulfide () for electronics. However, the strong $MoS_…
Aluminum oxide nucleation in the early stages of atomic layer deposition on epitaxial graphene
E. Schilirò, R. Lo Nigro, S. E. Panasci +5
In this work, the nucleation and growth mechanism of aluminum oxide (Al2O3) in the early stages of the direct atomic layer deposition (ALD) on monolayer epitaxial graphene (EG) on…
Properties of Al2O3 thin films deposited on 4H-SiC by reactive ion sputtering
P. Fiorenza, M. Vivona, S. Di Franco +5
In this work, the electrical properties of Al2O3 films deposited by reactive ion sputtering were investigated by means of morphological, chemical and electrical characterizations.…
Nanoscale insights on the origin of the Power MOSFETs breakdown after extremely long high temperature reverse bias stress
P. Fiorenza, M. Alessandrino, B. Carbone +8
In this work, the origin of the dielectric breakdown of 4H-SiC power MOSFETs was studied at the nanoscale, analyzing devices that failed after extremely long (three months) of high…
On the origin of the premature breakdown of thermal oxide on 3C-SiC probed by electrical scanning probe microscopy
P. Fiorenza, E. Schilirò, F. Giannazzo +4
The dielectric breakdown (BD) of thermal oxide (SiO2) grown on cubic silicon carbide (3C-SiC) was investigated comparing the electrical behavior of macroscopic metal-oxidesemicondu…
Atomic resolution interface structure and vertical current injection in highly uniform heterojunctions with bulk GaN
F. Giannazzo, S. E. Panasci, E. Schilirò +11
The integration of two-dimensional with recently attracted significant interest for future electronic/optoelectronic applications. However, the reported studies hav…
Understanding the role of threading dislocations on 4H-SiC MOSFET breakdown under high temperature reverse bias stress
P. Fiorenza, M. Alessandrino, B. Carbone +7
The origin of dielectric breakdown was studied on 4H-SiC MOSFETs that failed after three months of high temperature reverse bias (HTRB) stress. A local inspection of the failed dev…
Impact of stacking faults and domain boundaries on the electronic transport in cubic silicon carbide probed by conductive atomic force microscopy
F. Giannazzo, G. Greco, S. Di Franco +8
In spite of its great promises for energy efficient power conversion, the electronic quality of cubic silicon carbide (3C-SiC) on silicon is currently limited by the presence of a…
Time Dependent Dielectric Breakdown in 4H-SiC power MOSFETs under positive and negative gate-bias and gate-current stresses at 200°C
P. Fiorenza, F. Cordiano, S. M. Alessandrino +6
The gate oxide lifetime in 4H-SiC power MOSFETs is typically assessed at fixed and constant gate bias stress, monitoring the time-dependent dielectric breakdown (TDDB).
Nanoscale structural and electrical properties of graphene grown on AlGaN by catalyst-free chemical vapor deposition
F. Giannazzo, R. Dagher, E. Schilirò +8
The integration of graphene (Gr) with nitride semiconductors is highly interesting for applications in high-power/high-frequency electronics and optoelectronics. In this work, we d…
Morphological and electrical properties of Nickel based Ohmic contacts formed by laser annealing process on n-type 4H-SiC
S. RascunÃ, P. BadalÃ, C. Tringali +8
This work reports on the morphological and electrical properties of Ni-based back-side Ohmic contacts formed by laser annealing process for SiC power diodes. Nickel films, 100 nm t…