papers
Publications (2)
cond-mat.mes-hall2012
Excitation intensity dependence of photoluminescence spectra of SiGe quantum dots grown on prepatterned Si substrates: Evidence for biexcitonic transition
P. Klenovský, M. Brehm, V. KÅápek +7
The pumping intensity (I) dependence of the photoluminescence (PL) spectra of perfectly laterally two-dimensionally ordered SiGe quantum dots on Si(001) substrates was studied. The…
cond-mat.mes-hall2015
Efficient room-temperature light-emitters based on partly amorphised Ge quantum dots in crystalline Si
M. Grydlik, F. Hackl, H. Groiss +6
Semiconductor light emitters compatible with standard Si integration technology (SIT) are of particular interest for overcoming limitations in the operating speed of microelectroni…