Publications (18)
Bias Dependent Variability of Low Frequency Noise in Single Layer Graphene FETs
Nikolaos Mavredakis, Ramon Garcia Cortadella, Xavi Illa +5
Low-frequency noise (LFN) variability in graphene transistors (GFETs) is for the first time researched in this work. LFN from an adequate statistical sample of long-channel solutio…
An extended low-frequency noise compact model for single-layer graphene FETs including correlated mobility fluctuations effect
Nikolaos Mavredakis, Anibal Pacheco-Sanchez, David Jimenez
Correlated mobility fluctuations are considered in the physics-based carrier number fluctuation deltaN low-frequency noise (LFN) compact model of single-layer graphene field effect…
Variability-finding in Rubin Data Preview 1 with LSDB
Konstantin Malanchev, Melissa DeLucchi, Neven Caplar +56
The Vera C. Rubin Observatory recently released Data Preview 1 (DP1) in advance of the upcoming Legacy Survey of Space and Time (LSST), which will enable boundless discoveries in t…
Electrostatics of metal-graphene interfaces: sharp p-n junctions for electron-optical applications
Ferney A. Chaves, David Jimenez, Jaime E. Santos +2
Creation of sharp lateral p-n junctions in graphene devices, with transition widths well below the Fermi wavelength of graphene charge carriers, is vital to study and exploit these…
Analytic model for the surface potential and drain current in negative capacitance field-effect transistors
David Jimenez, Enrique Miranda, Andres Godoy
In 2008, Salahuddin and Datta proposed that a ferroelectric material operating in the negative capacitance region could act as a step-up converter of the surface potential in a MOS…
Drift-diffusion model for single layer transition metal dichalcogenide field-effect transistors
David Jimenez
A physics-based model for the surface potential and drain current for monolayer transition metal dichalcogenide (TMD) field-effect transistor (FET) is presented. Taking into accoun…