Publications (8)
High precision vector magnetometry with uniaxial quantum centers in silicon carbide
D. Simin, F. Fuchs, H. Kraus +4
We show that uniaxial color centers in silicon carbide with hexagonal lattice structure can be used to measure not only the strength but also the polar angle of the external magnet…
Optical thermometry based on level anticrossing in silicon carbide
A. N. Anisimov, D. Simin, V. A. Soltamov +4
We report a giant thermal shift of MHz/K related to the excited-state zero-field splitting in the silicon vacancy centers in 4H silicon carbide. It is obtained from the ind…
Locking of electron spin coherence over fifty milliseconds in natural silicon carbide
D. Simin, H. Kraus, A. Sperlich +3
We demonstrate that silicon carbide (SiC) with natural isotope abundance can preserve a coherent spin superposition in silicon vacancies over unexpectedly long time approaching 0.1…
Spin and optical properties of silicon vacancies in silicon carbide (a review)
S. A. Tarasenko, A. V. Poshakinskiy, D. Simin +5
We discuss the fine structure and spin dynamics of spin-3/2 centers associated with silicon vacancies in silicon carbide. The centers have optically addressable spin states which m…
Room-temperature near-infrared silicon carbide nanocrystalline emitters based on optically aligned spin defects
A. Muzha, F. Fuchs, N. V. Tarakina +8
Bulk silicon carbide (SiC) is a very promising material system for bio-applications and quantum sensing. However, its optical activity lies beyond the near infrared spectral window…
All-optical dc nanotesla magnetometry using silicon vacancy fine structure in isotopically purified silicon carbide
D. Simin, V. A. Soltamov, A. V. Poshakinskiy +10
We uncover the fine structure of a silicon vacancy in isotopically purified silicon carbide (4H-SiC) and find extra terms in the spin Hamiltonian, originated from the trigon…
Magnetic field and temperature sensing with atomic-scale spin defects in silicon carbide
H. Kraus, V. A. Soltamov, F. Fuchs +5
Quantum systems can provide outstanding performance in various sensing applications, ranging from bioscience to nanotechnology. Atomic-scale defects in silicon carbide are very att…
Influence of irradiation on defect spin coherence in silicon carbide
C. Kasper, D. Klenkert, Z. Shang +10
Irradiation-induced lattice defects in silicon carbide (SiC) have already exceeded their previous reputation as purely performance-inhibiting. With their remarkable quantum propert…