Publications (10)
Layout and Performance of HPK Prototype LGAD Sensors for the High-Granularity Timing Detector
X. Yang, S. Alderweireldt, N. Atanov +76
The High-Granularity Timing Detector is a detector proposed for the ATLAS Phase II upgrade. The detector, based on the Low-Gain Avalanche Detector (LGAD) technology will cover the…
Tuning of gain layer doping concentration and Carbon implantation effect on deep gain layer
S. M. Mazza, C. Gee, Y. Zhao +24
Next generation Low Gain Avalanche Diodes (LGAD) produced by Hamamatsu photonics (HPK) and Fondazione Bruno Kessler (FBK) were tested before and after irradiation with ~1MeV neutro…
Potential for Improved Time Resolution Using Very Thin Ultra-Fast Silicon Detectors (UFSDs)
A. Seiden, H. Ren, Y. Jin +14
Ultra-Fast Silicon Detectors (UFSDs) are n-in-p silicon detectors that implement moderate gain (typically 5 to 25) using a thin highly doped p++ layer between the high resistivity…
Effect of deep gain layer and Carbon infusion on LGAD radiation hardness
R Padilla, C. Labitan, Z. Galloway +22
The properties of 50 um thick Low Gain Avalanche Diode (LGAD) detectors manufactured by Hamamatsu photonics (HPK) and Fondazione Bruno Kessler (FBK) were tested before and after ir…
Radiation Campaign of HPK Prototype LGAD sensors for the High-Granularity Timing Detector (HGTD)
X. Shi, M. K. Ayoub, J. Barreiro Guimarães da Costa +74
We report on the results of a radiation campaign with neutrons and protons of Low Gain Avalanche Detectors (LGAD) produced by Hamamatsu (HPK) as prototypes for the High-Granularity…
Proprieties of FBK UFSDs after neutron and proton irradiation up to 6*10e15 neq/cm2
S. M. Mazza, E. Estrada, Z. Galloway +24
The properties of 60-μm thick Ultra-Fast Silicon Detectors (UFSD) detectors manufactured by Fondazione Bruno Kessler (FBK), Trento (Italy) were tested before and after irradiation…
A new approach to achieving high granularity for silicon diode detectors with impact ionization gain
S. Ayyoub, C. Gee, R. Islam +4
Low Gain Avalanche Diodes (LGADs) are thin (20-50 )silicon di ode sensors with modest internal gain (typically 5 to 50) and exceptional time resolution (17 to 50 ). H…
Experimental Study of Acceptor Removal in UFSD
Y. Jin, H. Ren, S. Christie +25
The performance of the Ultra-Fast Silicon Detectors (UFSD) after irradiation with neutrons and protons is compromised by the removal of acceptors in the thin layer below the juncti…
New Technologies for Discovery
Z. Ahmed, A. Apresyan, M. Artuso +80
For the field of high energy physics to continue to have a bright future, priority within the field must be given to investments in the development of both evolutionary and transfo…
Comparison of 35 and 50 μm thin HPK UFSD after neutron irradiation up to 6*10^15 neq/cm^2
Y. Zhao, N. Cartiglia, E. Estrada +13
We report results from the testing of 35 μm thick Ultra-Fast Silicon Detectors (UFSD produced by Hamamatsu Photonics (HPK), Japan and the comparison of these new results to data r…