Publications (9)
Stability of monodomain III-V crystals and antiphase boundaries over a Si monoatomic step
D. Gupta, S. Pallikkara Chandrasekharan, S. Thébaud +2
Here, we compare the stabilities of different III-V crystals configurations on stepped Si substrates, with or without anti-phase boundaries, for abrupt and compensated interfaces,…
Computational design of high performance hybrid perovskite on silicon tandem solar cells
A. Rolland, L. Pedesseau, A. Beck +7
In this study, the optoelectronic properties of a monolithically integrated series-connected tandem solar cell are simulated. Following the large success of hybrid organic-inorgani…
IPRT polarized radiative transfer model intercomparison project - Phase A
C. Emde, V. Barlakas, C. Cornet +8
The polarization state of electromagnetic radiation scattered by atmospheric particles such as aerosols, cloud droplets, or ice crystals contains much more information about the op…
A universal description of III-V/Si epitaxial growth processes
I. Lucci, S. Charbonnier, L. Pedesseau +15
Here, we experimentally and theoretically clarify III-V/Si crystal growth processes. Atomically-resolved microscopy shows that mono-domain 3D islands are observed at the early stag…
Determination of III-V/Si absolute interface energies: impact on wetting properties
S. Pallikkara Chandrasekharan, I. Lucci, D. Gupta +2
Here, we quantitatively determine the impact of III-V/Si interface atomic configuration on the wetting properties of the system. Based on a description at the atomic scale using de…
IPRT polarized radiative transfer model intercomparison project - Three-dimensional test cases (phase B)
C. Emde, V. Barlakas, C. Cornet +6
Initially unpolarized solar radiation becomes polarized by scattering in the Earth's atmosphere. In particular molecular scattering polarizes electromagnetic radiation, but also sc…
Inevitable Si surface passivation prior to III-V/Si epitaxy: A strong impact on wetting properties
S. Pallikkara Chandrasekharan, D. Gupta, C. Cornet +1
Here, we quantitatively estimate the impact of the inevitable Si surface passivation prior to III-V/Si hetero-epitaxy on the surface energy of the Si initial substrate, and explore…
Zinc-Blende group III-V/group IV epitaxy: importance of the miscut
C. Cornet, S. Charbonnier, I. Lucci +15
Here, we clarify the central role of the miscut during group III-V/ group IV crystal growth. We show that the miscut first impacts the initial antiphase domain distribution, with t…
Antiphase boundaries in III-V semiconductors: Atomic configurations, band structures and Fermi levels
L. Chen, L. Pedesseau, Y. Léger +3
Here, we comprehensively investigate the atomic structures and electronic properties of different antiphase boundaries in III-V semiconductors with different orientations and stoic…