Publications (6)
T centres in photonic silicon-on-insulator material
E. R. MacQuarrie, C. Chartrand, D. B. Higginbottom +4
Global quantum networks will benefit from the reliable creation and control of high-performance solid-state telecom photon-spin interfaces. T radiation damage centres in silicon pr…
Waveguide-integrated silicon T centres
A. DeAbreu, C. Bowness, A. Alizadeh +13
The performance of modular, networked quantum technologies will be strongly dependent upon the quality of their quantum light-matter interconnects. Solid-state colour centres, and…
Highly enriched Si reveals remarkable optical linewidths and fine structure for well-known damage centers
C. Chartrand, L. Bergeron, K. J. Morse +6
Luminescence and optical absorption due to radiation damage centers in silicon has been studied exhaustively for decades, but is receiving new interest for applications as emitters…
Optical observation of single spins in silicon
A. T. K. Kurkjian, D. B. Higginbottom, C. Chartrand +18
The global quantum internet will require long-lived, telecommunications band photon-matter interfaces manufactured at scale. Preliminary quantum networks based upon photon-matter i…
Characterization of the T center in Si
L. Bergeron, C. Chartrand, A. T. K. Kurkjian +7
Silicon is host to two separate leading quantum technology platforms: integrated silicon photonics as well as long-lived spin qubits. There is an ongoing search for the ideal photo…
A silicon-integrated telecom photon-spin interface
L. Bergeron, C. Chartrand, A. T. K. Kurkjian +7
Long-distance entanglement distribution is a vital capability for quantum technologies. An outstanding practical milestone towards this aim is the identification of a suitable matt…