Publications (18)
Valley population of donor states in highly strained silicon
B. Voisin, K. S. H. Ng, J. Salfi +13
Strain is extensively used to controllably tailor the electronic properties of materials. In the context of indirect band-gap semiconductors such as silicon, strain lifts the valle…
28nm Fully-Depleted SOI Technology: Cryogenic Control Electronics for Quantum Computing
H. Bohuslavskyi, S. Barraud, M. Cassé +8
This paper reports the first cryogenic characterization of 28nm Fully-Depleted-SOI CMOS technology. A comprehensive study of digital/analog performances and body-biasing from room…
Fast readout for large scale spin-based qubits
X. Luo, B. Bertrand, H. Niebojewski +3
In this letter, we present fast readout of Pauli spin blockade phenomena and interdot coupling tunability in a silicon double quantum dot (DQD) fabricated using industry-compatible…
Cryogenic Subthreshold Swing Saturation in FD-SOI MOSFETs described with Band Broadening
H. Bohuslavskyi, A. G. M. Jansen, S. Barraud +13
In the standard MOSFET description of the drain current as a function of applied gate voltage , the subthreshold swing has a funda…
All-Electrical Control of a Hybrid Electron Spin/Valley Quantum Bit in SOI CMOS Technology
L. Hutin, L. Bourdet, B. Bertrand +14
We successfully demonstrated experimentally the electrical-field-mediated control of the spin of electrons confined in an SOI Quantum Dot (QD) device fabricated with a standard CMO…
RF simulation platform of qubit control using FDSOI technology for quantum computing
H. Jacquinot, R. Maurand, G. Troncoso Fernandez Bada +6
In this paper, we report on simulations of an Electron Spin Resonance (ESR) RF control line for semiconductor electron spin qubits. The simulation includes both the ESR line charac…
Towards scalable silicon quantum computing
M. Vinet, L. Hutin, B. Bertrand +20
We report the efforts and challenges dedicated towards building a scalable quantum computer based on Si spin qubits. We review the advantages of relying on devices fabricated in a…
Spin readout of a CMOS quantum dot by gate reflectometry and spin-dependent tunnelling
V. N. Ciriano-Tejel, M. A. Fogarty, S. Schaal +8
Silicon spin qubits are promising candidates for realising large scale quantum processors, benefitting from a magnetically quiet host material and the prospects of leveraging the m…
A hole spin resilient to dipole-induced thermal effects
V. Champain, G. Boschetto, H. Niebojewski +12
Recent advances in scaling up spin-based quantum processors have revealed unanticipated issues related to thermal effects. Microwave pulses required to manipulate and read the qubi…
Fast spin information transfer between distant quantum dots using individual electrons
B. Bertrand, S. Hermelin, S. Takada +6
Transporting ensembles of electrons over long distances without losing their spin polarization is an important benchmark for spintronic devices. It requires usually to inject and t…
Fast gate-based readout of silicon quantum dots using Josephson parametric amplification
S. Schaal, I. Ahmed, J. A. Haigh +12
Spins in silicon quantum devices are promising candidates for large-scale quantum computing. Gate-based sensing of spin qubits offers compact and scalable readout with high fidelit…
A single hole spin with enhanced coherence in natural silicon
N. Piot, B. Brun, V. Schmitt +14
Semiconductor spin qubits based on spin-orbit states are responsive to electric field excitation allowing for practical, fast and potentially scalable qubit control. Spin-electric…
Gate-reflectometry dispersive readout and coherent control of a spin qubit in silicon
A. Crippa, R. Ezzouch, A. Aprá +10
Silicon spin qubits have emerged as a promising path to large-scale quantum processors. In this prospect, the development of scalable qubit readout schemes involving a minimal devi…
A quantum dot-based frequency multiplier
G. A. Oakes, L. Peri, L. Cochrane +8
Silicon offers the enticing opportunity to integrate hybrid quantum-classical computing systems on a single platform. For qubit control and readout, high-frequency signals are requ…
Gate reflectometry for probing charge and spin states in linear Si MOS split-gate arrays
L. Hutin, B. Bertrand, E. Chanrion +20
We fabricated linear arrangements of multiple splitgate devices along an SOI mesa, thus forming a 2xN array of individually controllable Si quantum dots (QDs) with nearest neighbor…
Fast high-fidelity single-shot readout of spins in silicon using a single-electron box
G. A. Oakes, V. N. Ciriano-Tejel, D. Wise +18
Three key metrics for readout systems in quantum processors are measurement speed, fidelity and footprint. Fast high-fidelity readout enables mid-circuit measurements, a necessary…
Cryogenic characterization of 28nm FD-SOI ring oscillators with energy efficiency optimization
H. Bohuslavskyi, S. Barraud, V. Barral +14
Extensive electrical characterization of ring oscillators (ROs) made in high- metal gate 28nm Fully-Depleted Silicon-on- Insulator (FD-SOI) technology is presented for a set of…
99.992 % Si CVD-grown epilayer on 300 mm substrates for large scale integration of silicon spin qubits
V. Mazzocchi, P. G. Sennikov, A. D. Bulanov +7
Silicon-based quantum bits with electron spins in quantum dots or nuclear spins on dopants are serious contenders in the race for quantum computation. Added to process integration…