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papers

Publications (2)

physics.ins-det2024

Evidence of Charge Multiplication in Thin $25 I^¼ m \times 25 I^¼ m$ Pitch 3D Silicon Sensors

Andrew Gentry, Maurizio Boscardin, Martin Hoeferkamp +4

Characterization measurements of $25 I^¼ m \times 25 I^¼ m$ pitch 3D silicon sensors are performed, for devices with active thickness of $150 I^¼$ m. Evidence of charge…

physics.ins-det2026

Active Edge Silicon Sensors Fabricated With Edge Ion Implantation and Microwave Annealing for Dopant Activation

Andrew Gentry, Julie Segal, Angela Kok +2

Silicon detectors typically require an insensitive area around their periphery to accommodate guard rings, which help maintain the electric field uniformity around edge pixels and…

Publications (2)

Evidence of Charge Multiplication in Thin 25I^¼m×25I^¼m Pitch 3D Silicon Sensors

Active Edge Silicon Sensors Fabricated With Edge Ion Implantation and Microwave Annealing for Dopant Activation

Evidence of Charge Multiplication in Thin $25 I^¼ m \times 25 I^¼ m$ Pitch 3D Silicon Sensors