Publications (17)
Time-dependent Effects in the Metallic Phase in Si-MOS: Evidence for Non-Diffusive Transport
V. M. Pudalov, G. Brunthaler, A. Prinz +2
We have found that the conduction in Si-MOS structures has a substantial imaginary component in the metallic phase for the density range 6 \times n_c > n > n_c, where n_c is the cr…
Weak Field Hall Resistance and Effective Carrier Density Through Metal-Insulator Transition in Si-MOS Structures
V. M. Pudalov, G. Brunthaler, A. Prinz +1
We studied the weak field Hall voltage in 2D electron layers in Si-MOS structures with different mobilities, through the metal-insulator transition. In the vicinity of the critical…
Maximum Metallic Conductivity in Si-MOS Structures
V. M. Pudalov, G. Brunthaler, A. Prinz +1
We found that the conductivity of the two-dimensional electron system in Si-MOS structures is limited to a maximum value, G_{max}, as either density increases or temperature decrea…
The low-density spin susceptibility and effective mass of mobile electrons in Si inversion layers
V. M. Pudalov, M. E. Gershenson, H. Kojima +5
We studied the Shubnikov-de Haas (SdH) oscillations in high-mobility Si-MOS samples over a wide range of carrier densities cm, which includes…
Reply to Comment on "Weak anisotropy and disorder dependence of the in-plane magnetoresistance in high mobility (100) Si-inversion layers"
V. M. Pudalov, G. Brunthaler, A. Prinz +1
Reply to the Comment by V.T. Dolgopolov and A.V. Gold [cond-mat/0203276].
Weak anisotropy and disorder dependence of the in-plane magnetoresistance in high mobility (100) Si-inversion layers
V. M. Pudalov, G. Brunthaler, A. Prinz +1
We report studies of the magnetoresistance (MR) in a two-dimensional electron system in (100) Si-inversion layers, for perpendicular and parallel orientations of the current with r…