papers

Publications (8)

cond-mat.mes-hall2020

On-chip Integration of Si/SiGe-based Quantum Dots and Switched-capacitor Circuits

Y. Xu, F. K. Unseld, A. Corna +9

Solid-state qubits integrated on semiconductor substrates currently require at least one wire from every qubit to the control electronics, leading to a so-called wiring bottleneck…

cond-mat.mes-hall2019

Control of single spin in CMOS devices and its application for quantum bits

R. Maurand, D. Kotekar-Patil, A. Corna +9

We show how to measure and manipulate a single spin in a CMOS device fabricated in a pre-industrial 300 mm CMOS foundry. The device can be used as a spin quantum bit working at ver…

cond-mat.mes-hall2019

SOI technology for quantum information processing

S. De Franceschi, L. Hutin, R. Maurand +9

We present recent progress towards the implementation of a scalable quantum processor based on fully-depleted silicon-on-insulator (FDSOI) technology. In particular, we discuss an…

cond-mat.mes-hall2015

Design and cryogenic operation of a hybrid quantum-CMOS circuit

P. Clapera, X. Jehl, A. Corna +4

Silicon-On-Insulator nanowire transistors of very small dimensions exhibit quantum effects like Coulomb blockade or single-dopant transport at low temperature. The same process als…

cond-mat.mes-hall2019

All-Electrical Control of a Hybrid Electron Spin/Valley Quantum Bit in SOI CMOS Technology

L. Hutin, L. Bourdet, B. Bertrand +14

We successfully demonstrated experimentally the electrical-field-mediated control of the spin of electrons confined in an SOI Quantum Dot (QD) device fabricated with a standard CMO…

cond-mat.mes-hall2017

Pauli spin blockade in CMOS double quantum dot devices

D. Kotekar-Patil, A. Corna, R. Maurand +6

Silicon quantum dots are attractive candidates for the development of scalable, spin-based qubits. Pauli spin blockade in double quantum dots provides an efficient, temperature ind…