Signature of spin-resolved quantum point contact in p-type trilayer WSe${}_2$ van der Waals heterostructure

Abstract

In this study, the electrostatically induced quantum confinement structure, quantum point contact, has been realized in p-type trilayer tungsten diselenide-based van der Waals heterostructure with modified van der Waals contact method with degenerately doped transition metal dichalcogenide crystals. Clear quantized conductance and pinch-off state through the one-dimensional confinement were observed by dual-gating of split gate electrodes and top gate. Conductance plateaus were observed at step of 0.5 $\times$ 2e${}^2$/h at zero and high magnetic field in addition to quarter plateaus at a finite bias voltage condition indicating the signature of spin-polarized quantum point contact realization.

Paper:25 pages and 4 figures, SI: 13 pages and 10 figures, accepted for publication in Nano Letters