paper

High-sensitivity of initial SrO growth on the residual resistivity in epitaxial thin films of SrRuO on SrTiO (001)

arXiv:2105.02404 · doi:10.1038/s41598-021-95554-x

Abstract

The growth of SrRuO (SRO) thin film with high-crystallinity and low residual resistivity (RR) is essential to explore its intrinsic properties. Here, utilizing the adsorption-controlled growth technique, the growth condition of initial SrO layer on TiO-terminated SrTiO (STO) (001) substrate was found to be crucial for achieving a low RR in the resulting SRO film grown afterward. The optimized initial SrO layer shows a (2 x 2) superstructure that was characterized by electron diffraction, and a series of SRO films with different thicknesses (s) were then grown. The resulting SRO films exhibit excellent crystallinity with orthorhombic-phase down to 4.3 nm, which was confirmed by high resolution X-ray measurements. From azimuthal X-ray scan for SRO orthorhombic (021) reflection, we uncover four structural domains with a dominant domain of orthorhombic SRO [001] along cubic STO [010] direction. The dominant domain population depends on , STO miscut angle (), and miscut direction (), giving a volume fraction of about 92 for 26.6 nm and (, ) ~ (0.14, 5). On the other hand, metallic and ferromagnetic properties were well preserved down to 1.2 nm. Residual resistivity ratio (RRR = (300 K)/(5 K)) reduces from 77.1 for 28.5 nm to 2.5 for 1.2 nm, while (5 K) increases from 2.5 cm for 28.5 nm to 131.0 cm for 1.2 nm. The ferromagnetic onset temperature () of around 151 K remains nearly unchanged down to 9.0 nm and decreases to 90 K for 1.2 nm. Our finding thus provides a practical guideline to achieve high crystallinity and low RR in ultra-thin SRO films by simply adjusting the growth of initial SrO layer.

22 pages, 7 figures