Charge collection properties of irradiated depleted CMOS pixel test structures

Abstract

Edge-TCT and charge collection measurements with passive test structures made in LFoundry 150 nm CMOS process on p-type substrate with initial resistivity of over 3 k$\hat{I}\text{c◯}$cm are presented. Measurements were made before and after irradiation with reactor neutrons up to 2$\cdot$10${}^{15}$ n${}_{\mathrm{eq}}$/cm${}^2$. Two sets of devices were investigated: unthinned (700 $\hat{I}¼$m) with substrate biased through the implant on top and thinned (200 $\hat{I}¼$m) with processed and metallised back plane. Depleted depth was estimated with Edge-TCT and collected charge was measured with ${}^{90}$Sr source using an external amplifier with 25 ns shaping time. Depleted depth at given bias voltage decreased with increasing neutron fluence but it was still larger than 70 $\hat{I}¼$m at 250 V after the highest fluence. After irradiation much higher collected charge was measured with thinned detectors with processed back plane although the same depleted depth was observed with Edge-TCT. Most probable value of collected charge of over 5000 electrons was measured also after irradiation to 2$\cdot$10${}^{15}$ n${}_{\mathrm{eq}}$/cm${}^2$. This is sufficient to ensure successful operation of these detectors at the outer layer of the pixel detector in the ATLAS experiment at the upgraded HL-LHC.