Microscopic control of ${}^{29}$Si nuclear spins near phosphorus donors in silicon

Abstract

We demonstrate an efficient control of ${}^{29}$Si nuclear spin orientation for specific lattice sites near ${}^{31}$P donors in silicon crystals at temperatures below 1 K and in high magnetic field of 4.6 T. Excitation of the forbidden electron-nuclear transitions leads to a pattern of narrow holes and peaks in the ESR lines of ${}^{31}$P. The pattern originates from dynamic polarization the ${}^{29}$Si nuclear spins near the donors via the solid effect. This method can be used for initialization of qubits based on ${}^{29}$Si nuclear spins in the all-silicon quantum computer. In comparison, polarization of ${}^{29}$Si performed by pumping the allowed ESR transitions, did not create any patterns. Instead, a single narrow spectral hole was burnt in the ESR line. The difference is explained by a rapid spin diffusion during the microwave pumping of the allowed transitions.