Epitaxial ferromagnetic Fe${}_3$Si/Si(111) structures with high-quality hetero-interfaces

Abstract

To develop silicon-based spintronic devices, we have explored high-quality ferromagnetic Fe${}_3$Si/silicon (Si) structures. Using low-temperature molecular beam epitaxy at 130 ${}^{c}irc$C, we realize epitaxial growth of ferromagnetic Fe${}_3$Si layers on Si (111) with keeping an abrupt interface, and the grown Fe${}_3$Si layer has the ordered $D{O}_3$ phase. Measurements of magnetic and electrical properties for the Fe${}_3$Si/Si(111) yield a magnetic moment of ~ 3.16 $m{u}_B$/f.u. at room temperature and a rectifying Schottky-diode behavior with the ideality factor of ~ 1.08, respectively.

3 pages, 3 figures