Doping evolution of the electronic structure in the single-layer cuprates BiSrLaCuO: Comparison with other single-layer cuprates
arXiv:0801.0782 · doi:10.1103/PhysRevB.77.094516
Abstract
We have performed angle-resolved photoemission and core-level x-ray photoemission studies of the single-layer cuprate BiSrLaCuO (Bi2201) and revealed the doping evolution of the electronic structure from the lightly-doped to optimally-doped regions. We have observed the formation of the dispersive quasi-particle band, evolution of the Fermi ``arc'' into the Fermi surface and the shift of the chemical potential with hole doping as in other cuprates. The doping evolution in Bi2201 is similar to that in CaNaCuOCl (Na-CCOC), where a rapid chemical potential shift toward the lower Hubbard band of the parent insulator has been observed, but is quite different from that in LaSrCuO (LSCO), where the chemical potential does not shift, yet the dispersive band and the Fermi arc/surface are formed around the Fermi level already in the lightly-doped region. The (underlying) Fermi surface shape and band dispersions are quantitatively analyzed using tight-binding fit, and the deduced next-nearest-neighbor hopping integral also confirm the similarity to Na-CCOC and the difference from LSCO.