Publications (17)
Acquisition and Analysis of Scanning Tunneling Spectroscopy Data WSe Monolayer
Randall M. Feenstra, Grayson R. Frazier, Yi Pan +5
Acquisition and analysis is described for scanning tunneling spectroscopy data acquired from a monolayer of WSe grown on epitaxial graphene on SiC. Curve fitting of the data is…
Dilute Rhenium Doping and its Impact on Intrinsic Defects in MoS2
Riccardo Torsi, Kyle T. Munson, Rahul Pendurthi +11
Substitutionally-doped 2D transition metal dichalcogenides are primed for next-generation device applications such as field effect transistors (FET), sensors, and optoelectronic ci…
Experimental signature of layer skyrmions and implications for band topology in twisted WSe2 bilayers
Fan Zhang, Nicolás Morales-Durán, Yanxing Li +13
Transition metal dichalcogenide (TMD) twisted homobilayers have been established as an ideal platform for studying strong correlation phenomena, as exemplified by the recent discov…
Atom identification in bilayer moire materials with Gomb-Net
Austin C. Houston, Sumner B. Harris, Hao Wang +4
Moire patterns in van der Waals bilayer materials complicate the analysis of atomic-resolution images, hindering the atomic-scale insight typically attainable with scanning transmi…
Atomically Thin Resonant Tunnel Diodes built from Synthetic van der Waals Heterostructures
Yu-Chuan Lin, Ram Krishna Ghosh, Rafik Addou +10
Vertical integration of two-dimensional van der Waals materials is predicted to lead to novel electronic and optical properties not found in the constituent layers. Here, we presen…
Quantum-Confined Electronic States arising from Moiré Pattern of MoS2-WSe2 Hetero-bilayers
Yi Pan, Stefan Fölsch, Yifan Nie +7
A two-dimensional (2D) hetero-bilayer system consisting of MoS2 on WSe2, deposited on epitaxial graphene, is studied by scanning tunneling microscopy and spectroscopy at temperatur…
Tailoring Amorphous Boron Nitride for High-Performance 2D Electronics
Cindy Y. Chen, Zheng Sun, Riccardo Torsi +8
Two-dimensional (2D) materials have garnered significant attention in recent years due to their atomically thin structure and unique electronic and optoelectronic properties. To ha…
Influence of Rhenium Concentration on Charge Doping and Defect Formation in MoS2
Kyle T. Munson, Riccardo Torsi, Fatimah Habis +8
Substitutionally doped transition metal dichalcogenides (TMDs) are the next step towards realizing TMD-based field effect transistors, sensors, and quantum photonic devices. Here,…
Charge State-Dependent Symmetry Breaking of Atomic Defects in Transition Metal Dichalcogenides
Feifei Xiang, Lysander Huberich, Preston A. Vargas +11
The functionality of atomic quantum emitters is intrinsically linked to their host lattice coordination. Structural distortions that spontaneously break the lattice symmetry strong…
Vibration-assisted tunneling through single Au adatoms on two-dimensional WSe2
Hitesh Kumar, Yu-Chuan Lin, Joshua A. Robinson +1
Scanning tunneling microscopy (STM) at 5 K was used to study individual Au atoms adsorbed on the surface of a WSe2 layer grown on epitaxial graphene. In line with theoretical predi…
Magnetic brightening and control of dark excitons in monolayer WSe2
Xiao-Xiao Zhang, Ting Cao, Zhengguang Lu +9
Monolayer transition metal dichalcogenide (TMDC) crystals, as direct-gap materials with unusually strong light-matter interaction, have attracted much recent attention. In contrast…
Growth of Large-Area and Highly Crystalline MoS2 Thin Layers on Insulating Substrates
Keng-Ku Liu, Wenjing Zhang, Yi-Hsien Lee +9
The two-dimensional layer of molybdenum disulfide (MoS2) has recently attracted much interest due to its direct-gap property and potential applications in optoelectronics and energ…
Unique excitonic effects in tungsten disulphide monolayers on two-layer graphene
Cristina E. Giusca, Ivan Rungger, Vishal Panchal +8
Light emission in atomically thin heterostructures is known to depend on the type of materials, number and stacking sequence of the constituent layers. Here we show that the thickn…
Flatbands and Mechanical Deformation Effects in the Moiré Superlattice of MoS-WSe Heterobilayers
Dacen Waters, Yifan Nie, Felix Lüpke +11
It has recently been shown that quantum-confined states can appear in epitaxially grown van der Waals material heterobilayers without a rotational misalignment (), asso…
Thickness characterization of atomically-thin WSe on epitaxial graphene by low-energy electron reflectivity oscillations
Sergio C. de la Barrera, Yu-Chuan Lin, Sarah M. Eichfeld +4
In this work, low-energy electron microscopy is employed to probe structural as well as electronic information in few-layer WSe on epitaxial graphene on SiC. The emergence of u…
Collective quantum state at the atomic limit
Fan Zhang, Yanxing Li, Chengye Dong +8
Collective quantum states are often associated with extended systems, where spatially extensive degrees of freedom enable emergent many-body behavior; whether such strongly correla…
Deep UV Silicon Polaritonic Metasurfaces for Enhancing Biomolecule Autofluorescence and Two-Dimensional Material Double-Resonance Raman Scattering
Bo-Ray Lee, Mao Feng Chiang, Pei Ying Ho +17
High-performance DUV spectroscopy drives advancements in biomedical research, clinical diagnosis, and material science. Existing DUV resonant nanostructures face instability and ph…