Publications (4)
Ab initio design of quaternary Heusler compounds for reconfigurable magnetic tunnel diodes and transistors
T. Aull, E. ÅaÅıoÄlu, I. V. Maznichenko +4
Reconfigurable magnetic tunnel diodes and transistors are a new concept in spintronics. The realization of such a device requires the use of materials with unique spin-dependent el…
Study of Magnetic Tunnel Junctions Based on Half-Metallic and Spin-Gapless Semiconducting Heusler Compounds: Reconfigurable Diode and Inverse Tunnel-Magnetoresistance Effect
T. Aull, E. ÅaÅıoÄlu, N. F. Hinsche +1
Magnetic tunnel junctions (MTJs) have attracted strong research interest within the last decades due to their potential use as nonvolatile memory such as MRAM as well as for magnet…
First principles design of Ohmic spin diodes based on quaternary Heusler compounds
T. Aull, E. ÅaÅıoÄlu, I. Mertig
The Ohmic spin diode (OSD) is a recent concept in spintronics, which is based on half-metallic magnets (HMMs) and spin-gapless semiconductors (SGSs). Quaternary Heusler compounds o…
Half-Metal Spin-Gapless Semiconductor Junctions as a Route to the Ideal Diode
E. ÅaÅıoÄlu, T. Aull, D. Kutschabsky +2
The ideal diode is a theoretical concept that completely conducts the electric current under forward bias without any loss and that behaves like a perfect insulator under reverse b…