papers

Publications (12)

cond-mat.mes-hall2014

Characterizing the rate and coherence of single-electron tunneling between two dangling bonds on the surface of silicon

Zahra Shaterzadeh-Yazdi, Lucian Livadaru, Marco Taucer +4

We devise a scheme to characterize tunneling of an excess electron shared by a pair of tunnel-coupled dangling bonds on a silicon surface -- effectively a two-level system. Theoret…

cond-mat.mes-hall2013

Nanoscale structuring of tungsten tip yields most coherent electron point-source

Josh Y. Mutus, Lucian Livadaru, Radovan Urban +3

This report demonstrates the most spatially-coherent electron source ever reported. A coherence angle of 14.3 +/- 0.5 degrees was measured, indicating a virtual source size of 1.7…

cond-mat.mtrl-sci2020

Ionic Charge Distributions in Silicon Atomic Wires

Jeremiah Croshaw, Taleana Huff, Mohamad Rashidi +4

Using a non-contact atomic force microscope (nc-AFM), we examine continuous DB wire structures on the hydrogen-terminated silicon (100) 2x1 surface. By probing the DB structures at…

cond-mat.mes-hall2015

Scanning tunneling spectroscopy reveals a silicon dangling bond charge state transition

Hatem Labidi, Marco Taucer, Mohammad Rashidi +6

We report the study of single dangling bonds (DB) on the hydrogen terminated silicon (100) surface using a low temperature scanning tunneling microscope (LT-STM). By investigating…

cond-mat.mtrl-sci2018

Binary Atomic Silicon Logic

Taleana Huff, Hatem Labidi, Mohammad Rashidi +5

It has long been anticipated that the ultimate in miniature circuitry will be crafted of single atoms. Despite many advances made in scanned probe microscopy studies of molecules a…

cond-mat.mtrl-sci2025

Engineering Quantum Wire States for Atom Scale Circuitry

Max Yuan, Lucian Livadaru, Roshan Achal +3

Recent advances in hydrogen lithography on silicon surfaces now enable the fabrication of complex and error-free atom-scale circuitry. The structure of atomic wires, the most basic…

quant-ph2025

Roadmap on Atomic-scale Semiconductor Devices

Steven R. Schofield, Andrew J. Fisher, Eran Ginossar +47

Spin states in semiconductors provide exceptionally stable and noise-resistant environments for qubits, positioning them as optimal candidates for reliable quantum computing techno…

cond-mat.mes-hall2015

New fabrication technique for highly sensitive qPlus sensor with well-defined spring constant

Hatem Labidi, Martin Kupsta, Taleana Huff +5

A new technique for the fabrication of highly sensitive qPlus sensor for atomic force microscopy (AFM) is described. Focused ion beam was used to cut then weld onto a bare quartz t…

cond-mat.mtrl-sci2024

Electronic Structures of Atomic Silicon Dimer Wires as a Function of Length

Furkan M. Altincicek, Lucian Livadaru, Christopher C. Leon +6

Bare silicon dimers on hydrogen-terminated Si(100) have two dangling bonds. These are atomically localized regions of high state density near to and within the bulk silicon band ga…

cond-mat.mtrl-sci2025

Structural Control of Atomic Silicon Wires

Furkan M. Altincicek, Christopher C. Leon, Lucian Livadaru +5

Bare Si(100)-21 surface atoms exhibit a buckled structure where one Si atom in a dimer is lowered while the other is raised, leading to two possible buckling configurations…

cond-mat.mes-hall2011

Theory of Non-equilibrium Single Electron Dynamics in STM Imaging of Dangling Bonds on a Hydrogenated Silicon Surface

Lucian Livadaru, Jason Pitters, Marco Taucer +1

During fabrication and scanning-tunneling-microscope (STM) imaging of dangling bonds (DBs) on a hydrogenated silicon surface, we consistently observed halo-like features around iso…

cond-mat.str-el2013

Silicon Atomic Quantum Dots Enable Beyond-CMOS Electronics

Robert A. Wolkow, Lucian Livadaru, Jason Pitters +5

We review our recent efforts in building atom-scale quantum-dot cellular automata circuits on a silicon surface. Our building block consists of silicon dangling bond on a H-Si(001)…