Publications (11)
Bulk Cr tips for scanning tunneling microscopy and spin-polarized scanning tunneling microscopy
A. Li Bassi, C. S. Casari, D. Cattaneo +9
A simple, reliable method for preparation of bulk Cr tips for Scanning Tunneling Microscopy (STM) is proposed and its potentialities in performing high-quality and high-resolution…
Spin-polarized tunneling spectroscopy in tunnel junctions with half-metallic electrodes
M. Bowen, A. Barthélémy, M. Bibes +6
We have studied the magnetoresistance (TMR) of tunnel junctions with electrodes of La2/3Sr1/3MnO3 and we show how the variation of the conductance and TMR with the bias voltage can…
Surfactant-like Effect and Dissolution of Ultrathin Fe Films on Ag(001)
S. Terreni, A. Cossaro, G. Gonella +8
The phase immiscibility and the excellent matching between Ag(001) and Fe(001) unit cells (mismatch 0.8 %) make Fe/Ag growth attractive in the field of low dimensionality magnetic…
Tuning spin-charge interconversion with quantum confinement in ultrathin Bi/Ge(111) films
C. Zucchetti, M. -T Dau, F. Bottegoni +16
Spin-charge interconversion (SCI) phenomena have attracted a growing interest in the field of spintronics as means to detect spin currents or manipulate the magnetization of ferrom…
Spin photovoltaic cell
F. Bottegoni, M. Celebrano, M. Bollani +4
Spintronics, which aims at exploiting the spin degree of freedom of carriers inside electronic devices, has a huge potential for quantum computation and dissipationless interconnec…
Proximity effects induced by a gold layer on La0.67Sr0.33MnO3 thin films
R. Bertacco, S. Brivio, M. Cantoni +8
We report about La0.67Sr0.33MnO3 single crystal manganite thin films in interaction with a gold capping layer. With respect to uncoated manganite layers of the same thickness, Au-c…
Valley and spin dynamics in monolayer MoS
S. Dal Conte, F. Bottegoni, E. A. A. Pogna +10
Valleytronics targets the exploitation of the additional degrees of freedom in materials where the energy of the carriers may assume several equal minimum values (valleys) at non-e…
Condensation of holes into antiferromagnetic droplets in the organic semiconductor (DOEO)[HgBr]TCE
O. V. Koplak, A. Chernenkaya, K. Medjanik +6
Changes of the electronic structure accompanied by charge localization and a transition to an antiferromagnetic ground state were observed in the (DOEO)[HgBr]TCE organic se…
Direct observation of intravalley spin relaxation in single-layer WS
Z. Wang, A. Molina-Sanchez, P. Altmann +12
In monolayer Transition Metal Dichalcogenides (TMDs) the valence and conduction bands are spin split because of the strong spin-orbit interaction. In tungsten-based TMDs the spin-o…
Spin-orbitronics at a topological insulator-semiconductor interface
T. Guillet, C. Zucchetti, A. Marchionni +9
Topological insulators (TIs) hold great promises for new spin-related phenomena and applications thanks to the spin texture of their surface states. However, a versatile platform a…
Optical spin injection and spin lifetime in Ge heterostructures
F. Pezzoli, F. Bottegoni, D. Trivedi +9
We demonstrate optical orientation in Ge/SiGe quantum wells and study their spin properties. The ultrafast electron transfer from the center of the Brillouin zone to its edge allow…