Publications (17)
Thermal Conductivity of Double Polymorph Ga2O3 Structures
Azat Abdullaev, Kairolla Sekerbayev, Alexander Azarov +4
Recently discovered double gamma/beta (γ/\b{eta}) polymorph Ga2O3 structures constitute a class of novel materials providing an option to modulate functional properties across int…
GaZn-VZn acceptor complex defect in Ga-doped ZnO
Aihua Tang, Zengxia Mei, Yaonan Hou +5
Identification of complex defect has been a long-sought-after physics problem for controlling the defect population and engineering the useful properties in wide bandgap oxide semi…
Oxygen vacancies: The origin of n-type conductivity in ZnO
Lishu Liu, Zengxia Mei, Aihua Tang +4
Oxygen vacancy (VO) is a common native point defects that plays crucial roles in determining the physical and chemical properties of metal oxides such as ZnO. However, fundamental…
Boron-doping of cubic SiC for intermediate band solar cells: a scanning transmission electron microscopy study
Patricia Almeida Carvalho, Annett Thørgesen, Quanbao Ma +9
Boron (B) has the potential for generating an intermediate band in cubic silicon carbide (3C-SiC), turning this material into a highly efficient absorber for single-junction solar…
Phase glides and self-organization of atomically abrupt interfaces out of stochastic disorder in -GaO
Alexander Azarov, Javier GarcÃa Fernández, Junlei Zhao +6
Disorder-induced ordering and unprecedentedly high radiation tolerance in -phase of gallium oxide is a recent spectacular discovery at the intersection of the fundamental physi…
Universal radiation tolerant semiconductor
Alexander Azarov, Javier GarcÃa Fernández, Junlei Zhao +10
Radiation tolerance is determined as the ability of crystalline materials to withstand the accumulation of the radiation induced disorder. Nevertheless, for sufficiently high fluen…
Crystallization Instead of Amorphization in Collision Cascades in Gallium Oxide
Junlei Zhao, Javier GarcÃa Fernández, Alexander Azarov +6
Disordering of solids typically leads to amorphization, but polymorph transitions, facilitated by favorable atomic rearrangements, may temporarily help to maintain long-range perio…
Self-assembling of multilayered polymorphs with ion beams
Alexander Azarov, Cristian Radu, Augustinas Galeckas +8
Polymorphism contributes to the diversity of nature, so that even materials having identical chemical compositions exhibit variations in properties because of different lattice sym…
Ions leaving no tracks
Azat Abdullaev, Javier Garcia Fernandez, Chloe Nozais +13
The paths of swift heavy ions are typically traceable in solids, because of confined electronic interactions along the paths, inducing what is known in literature as 'ion tracks',…
Band Offsets at β/γ- Interface
Huan Liu, Ilja Makkonen, Calliope Bazioti +4
Ultrawide bandgap semiconductor gallium oxide (Ga2O3) and its polymorphs have recently attracted increasing attention across physics, materials science, and electronics communities…
Microtubes and nanomembranes by ion-beam-induced exfoliation of -GaO
Duarte Magalhães Esteves, Ru He, Calliope Bazioti +8
This paper reports an innovative process to fabricate -GaO microtubes and nanomembranes based on ion implantation in (100)-oriented single-crystals. We show that, u…
Fluorine doping: A feasible solution to enhancing the conductivity of high-resistance wide bandgap Mg0.51Zn0.49O active components
Lishu Liu, Zengxia Mei, Yaonan Hou +5
N-type doping of high-resistance wide bandgap semiconductors, wurtzite high-Mg-content MgxZn1-xO for instance, has always been a fundamental application-motivated research issue. H…
Interplay of the disorder and strain in gallium oxide
Alexander Azarov, Vishnukanthan Venkatachalapathy, Platon Karaseov +4
Ion irradiation is a powerful tool to tune properties of semiconductors and, in particular, of gallium oxide (Ga2O3) which is a promising ultra-wide bandgap semiconductor exhibitin…
Germanium-based quantum emitters for time-reordering entanglement scheme with degenerate exciton and biexciton states
Nicola Dotti, Francesco Sarti, Sergio Bietti +7
We address the photoluminescence emission of individual germanium extrinsic centers in Al_0.3Ga0.7As epilayers grown on germanium substrates. Through a thorough analysis of micro-p…
Disorder-induced ordering in gallium oxide polymorphs
Alexander Azarov, Calliope Bazioti, Vishnukanthan Venkatachalapathy +3
Polymorphs are common in nature and can be stabilized by applying external pressure in materials. The pressure/strain can also be induced by the gradually accumulated radiation dis…
Optical library of Ga2O3 polymorphs
Augustinas Galeckas, Adrian Cernescu, Anna Kaźmierczak-BaÅata +13
Gallium oxide is an emerging material of interest due to its unique combination of functional properties and the existence of multiple polymorphs - α, β, γ, δ, and κ - each ex…
Optical activity and phase transformations in γ/β Ga2O3 bilayers under annealing
Alexander Azarov, Augustinas Galeckas, Ildikó Cora +4
Gallium oxide (Ga2O3) can be crystallized in several polymorphs exhibiting different physical properties. In this work, polymorphic structures consisting of the cubic defective spi…